Diamond growth on turbostratic carbon by hot filament chemical vapor deposition

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Abstract
Diamond films were grown on turbostratic carbon (TC) pregrown on Cu substrates by hot filament chemical vapor deposition. Auger electron spectroscopy, Raman spectroscopy, x-ray diffraction, infrared absorption spectroscopy, and scanning electron microscopy were used to characterize both the TC and the diamond films. It was shown that the TC films could form on Cu at low temperatures (≊650 °C) with the catalysis of Mo and that diamond crystallites rapidly formed on TC in less than 10 min at higher temperature (≊1000 °C). The sp3 bonds were found to coexist with sp2 bonds in TC. The sp3 bonds in TC provide nucleation sites for diamond crystals and improve the nucleation rate at the early stage of deposition of diamond on TC.