Carrier-induced refractive-index change, mode gain and spontaneous-emission factor in AlGaInP SQW-SCH laser diodes

24 May 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (11) , 766-767
https://doi.org/10.1049/el:19900501

Abstract

The carrier-induced refractive-index change, mode gain and spontaneous emission factor are evaluated for AlGaInP single-quantum-well laser diodes with separate-confinement heterostructures. The results are compared with those of AlGaInP double-heterostructure lasers. The values of the α parameter, defined as the ratio of the real part of the refractive index to the imaginary part of the refractive index, are estimated as 4.9 and 12.8.

Keywords

ALGAINP
SINGLE-QUANTUM-WELL
Α PARAMETERS
MODE GAIN
SQW-SCH LASER DIODES
SEMICONDUCTOR LASERS
CARRIER-INDUCED REFRACTIVE-INDEX CHANGE
SPONTANEOUS-EMISSION FACTOR
TE MODE
DOUBLE-HETEROSTRUCTURE LASERS
TM MODE
SEPARATE-CONFINEMENT HETEROSTRUCTURES

This publication has 0 references indexed in Scilit: