Polarization fatigue in perovskite ferroelectric ceramics and thin-films
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 111-115
- https://doi.org/10.1109/isaf.1992.300637
Abstract
The ferroelectric polarization fatigue (loss of polarization with cycling) of donor- and acceptor-doped BaTiO/sub 3/ ceramics and PZT (lead zirconate titanate) thin films have been investigated. Donor-doped BaTiO/sub 3/ ceramics showed significantly improved fatigue characteristics compared with acceptor-doped materials. Enhanced fatigue properties were also observed in donor-doped PZT thin films. The electric-field-assisted migration of charged species within ferroelectric materials may be responsible for the degradation/fatigue behavior. The results obtained confirm the expectation that oxygen vacancies play an important role in degradation/fatigue under electric switching.Keywords
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