Analytical method for selecting random scattering angle for polar or acoustic phonon scattering of central valley conduction band electrons in GaAs
- 1 January 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices
- Vol. 134 (2) , 45-50
- https://doi.org/10.1049/ip-i-1.1987.0006
Abstract
The introduction of nonparabolicity to the electron conduction band structure of GaAs produces scattering angle probability distributions which seem to be non-invertible for finding the scattering angle β from a uniformly distributed random number r. The paper shows that an exact analytical inversion can be obtained for the acoustic phonon-electron scattering process in the central (000) valley based on scattering transition rates. For the polar optical phonon-electron scattering process, an exact inversion is proven to be impossible in the (000) valley, but analytical inversions are found in regions formed by constant energy surfaces in momentum k space. These results can be applied to Monte Carlo numerical techniques for finding electron transport behaviour in GaAs devices.Keywords
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