Ag-induced multistep formation on Si(001)
- 9 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (15) , 2185-2187
- https://doi.org/10.1063/1.115097
Abstract
The step topography of 4°-misoriented Si(001) surfaces was examined by scanning tunneling microscopy and spot profile analyzing–low-energy electron diffraction. The clean Si(001)-(2×1) surface proves to be a single domain substrate, which is characterized by a regular array of double steps. This step structure is changed dramatically upon adsorption of submonolayer quantities of Ag at ∼700 K. In this case, the formation of multisteps with fourfold, sixfold, and eightfold step heights occurs. The single domain character of the substrate is preserved, now showing a Ag-induced (3×2) reconstruction.Keywords
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