A new static method for measuring minority carrier lifetime
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5158-5160
- https://doi.org/10.1063/1.332740
Abstract
The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current-carrying contact on a high-lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injection, a uniform field is obtained only for a particular current density, and that depends directly on the carrier lifetime.This publication has 8 references indexed in Scilit:
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