Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy
- 15 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (2) , 752-756
- https://doi.org/10.1063/1.348921
Abstract
Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve.This publication has 11 references indexed in Scilit:
- High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxyApplied Physics Letters, 1989
- Growth of InGaP on GaAs using gas-source molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1989
- MBE growth and properties of (100)- and (111)-oriented GaInP/AlInP quantum wells on GaAs substratesJournal of Crystal Growth, 1989
- Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVDJournal of Crystal Growth, 1988
- GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAsJapanese Journal of Applied Physics, 1988
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxyApplied Physics Letters, 1987
- InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Simulation of X-ray double-crystal rocking curves at multiple and inhomogeneous heteroepitaxial layersJournal of Applied Crystallography, 1985
- Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength regionApplied Physics Letters, 1984