Boron doping of Si molecular-beam epitaxy layers: A new high-temperature effusion cell
- 1 May 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (3) , 835-841
- https://doi.org/10.1116/1.584350
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: