High performance MESFET power amplifiers for high volume application in KA band
- 1 July 1991
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 4 (8) , 285-288
- https://doi.org/10.1002/mop.4650040802
Abstract
A very repeatable MBE power MMIC process has been developed for low‐cost and high‐volume Ka‐band applications. The RF yield under power drive has reached more than 60%. The power out in a balanced configuration was 300 mW with 18% power added efficiency at 30 GHz.Keywords
This publication has 3 references indexed in Scilit:
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- A high efficiency Ka-band monolithic GaAs FET amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- K/sub a/-band Monolithic GaAs Power FET AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987