High‐Temperature Defect Structure of Lanthanum Cuprate
- 1 November 1990
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 73 (11) , 3453-3456
- https://doi.org/10.1111/j.1151-2916.1990.tb06474.x
Abstract
High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated.Keywords
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