p- and n-type carbon doping of InxGa1−xAsyP1−y alloys lattice matched to InP

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Abstract
The carbon doping of InxGa1−xAsyP1−y alloys grown by chemical beam epitaxy was studied in the whole range of compositions lattice matched to InP, using carbon–tetrabromide as a source of carbon. The conductivity changed from p‐ to n‐type when going from In0.53Ga0.47As to InP, with a transition point at a composition corresponding to a wavelength of 1.35 μm. The carbon doped n‐type quaternaries were found to be very compensated even for compositions close to InP. The p‐type quaternaries showed little compensation near the transition point, and almost no compensation for compositions close to In0.53Ga0.47As. Reducing the V/III ratio, while keeping all other growth parameters unchanged, increased the incorporation of the carbon atom, and reduced the compensation for p‐type quaternaries. The inversion point position did not change appreciably when the quaternaries were grown with a halved V/III ratio.

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