Multiple quantum well-tuned GaAs/AlGaAs laser

19 January 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (2) , 145-146
https://doi.org/10.1049/el:19890105

Abstract

The electrorefractive effect in a pin multiple-quantum-well (MQW) modulator has been used in a novel, electronically tuned, external-cavity GaAs/AlGaAs laser system. Mode selection over a frequency range of 600 GHz (1.4nm in wavelength) has been demonstrated for a 6 V change in MQW modulator bias, with less than 0.6 dB variation in laser output power.

Keywords

6 V CHANGE
FREQUENCY RANGE
GAAS-ALGAAS LASERS
ELECTROREFRACTIVE EFFECT
MQW MODULATOR BIAS
VARIATION IN LASER OUTPUT POWER
EXTERNAL-CAVITY
ELECTRONICALLY TUNED

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