Direct Observation of Defect Motion in Silicon By High-Resolution Transmission Electron Microscopy
- 1 August 1985
- journal article
- Published by Cambridge University Press (CUP) in Proceedings, annual meeting, Electron Microscopy Society of America
- Vol. 43, 358-359
- https://doi.org/10.1017/s0424820100118667
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984
- Dynamic observation of defect annealing in CdTe at lattice resolutionNature, 1982
- Atomic motion on the surface of a cadmium telluride single crystalNature, 1981
- Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated GermaniumJapanese Journal of Applied Physics, 1980