Solid phase crystallization of thin films of Si prepared by plasma-enhanced chemical vapor deposition
- 1 July 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (1) , 129-134
- https://doi.org/10.1063/1.354144
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Transient kinetics of nucleation and crystallization: Part II. CrystallizationJournal of Materials Research, 1991
- Transient kinetics of nucleation and crystallization: Part I. NucleationJournal of Materials Research, 1991
- Influence of layer thickness on nucleation in amorphous silicon thin filmsMaterials Letters, 1990
- Aspects of silicon crystallizationJournal of Crystal Growth, 1990
- Transient solid-phase crystallization study of chemically vapor-deposited amorphous silicon films byin situx-ray diffractionPhysical Review B, 1989
- Calorimetric evidence for structural relaxation in amorphous siliconPhysical Review Letters, 1989
- Variable strain energy in amorphous siliconJournal of Materials Research, 1988
- Test of classical nucleation theory in a condensed systemPhysical Review B, 1988
- Induction Time for Nucleation in Amorphous Silicon Films Prepared by Plasma CVDJapanese Journal of Applied Physics, 1988
- Solid-phase crystallization kinetics in dopeda-Si chemical-vapor-deposition filmsPhysical Review B, 1985