Systems-oriented survey of noncontact temperature measurement techniques for rapid thermal processing

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Abstract
Rapid Thermal Processing (RTP) is becoming a popular approach for future ULSI manufacturing due to its unique low thermal budget and process flexibility. Furthermore when RTP is combined with Chemical Vapor Deposition (CVD) the so-called RTP-CVD technology it can be used to deposit ultrathin films with extremely sharp interfaces and excellent material qualities. One major consequence of this type of processing however is the need for extremely tight control of wafer temperature both to obtain reproducible results for process control and to minimize slip and warpage arising from nonuniformities in temperature. Specifically temperature measurement systems suitable for RiP must have both high precision--within 1-2 degrees--and a short response time--to output an accurate reading on the order of milliseconds for closedloop control. Any such in-situ measurement technique must be non-contact since thermocouples cannot meet the response time requirements and have problems with conductive heat flow in the wafer. To date optical pyrometry has been the most widely used technique for RiP systems although a number of other techniques are being considered and researched. This article examines several such techniques from a systems perspective: optical pyrometry both conventional and a new approach using ellipsometric techniques for concurrent emissivity measurement Raman scattering infrared laser thermometry optical diffraction thermometry and photoacoustic thermometry. Each approach is evaluated in terms of its actual or estimated manufacturing cost remote sensing capability precision repeatability dependence on processing history range

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