Oxygen pressure as a parameter in the D.C. plasma anodization of silicon
- 1 April 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 67 (2) , 261-264
- https://doi.org/10.1016/0040-6090(80)90458-7
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Factors Affecting the Growth Rate of Plasma A nodi zed Al[sub 2]O[sub 3]Journal of the Electrochemical Society, 1971
- The Gaseous Anodization of AluminumIEEE Transactions on Parts, Materials and Packaging, 1965
- Plasma Anodized Aluminum Oxide FilmsJournal of the Electrochemical Society, 1964
- The Formation of Metal Oxide Films Using Gaseous and Solid ElectrolytesJournal of the Electrochemical Society, 1963