Reaction of NO to form N2O and surface oxide on GaAs(100)
- 1 April 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 265 (1-3) , 305-313
- https://doi.org/10.1016/0039-6028(92)90510-d
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- Dynamic photoinduced low-temperature oxidation of GaAs(110)Physical Review B, 1990
- Electron stimulated desorption from GaAs(100) surfaceJournal of Vacuum Science & Technology A, 1988
- Photoemission study of nitric oxide adsorption on (110) gallium arsenideJournal of Vacuum Science & Technology A, 1987
- Oxygen chemisorption on GaAs(110): Surface or subsurface growth?Journal of Vacuum Science & Technology B, 1986
- Summary Abstract: Oxygen on GaAs(110): New results confirming the two-step uptake-modelJournal of Vacuum Science & Technology B, 1986
- Overlayer-induced enhanced oxidation of GaAs surfacesJournal of Vacuum Science & Technology A, 1986
- Elevated temperature low energy ion cleaning of GaAsJournal of Vacuum Science & Technology B, 1983
- UV photoemission study of low temperature oxygen adsorption on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Adsorption of O2 and CO on cleaved GaAs(110) at low temperaturesJournal of Vacuum Science & Technology A, 1983
- An X‐Ray Photoelectron Spectroscopy Study of Native Oxides on GaAsJournal of the Electrochemical Society, 1979