Novel technique for deposition of hydrogenated amorphous silicon thin films

22 May 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (11) , 603-605
https://doi.org/10.1049/el:19860410

Abstract

Amorphous silicon films have been deposited from the direct photoenhanced decomposition of monosilane. The use of a hydrogen discharge lamp within the reaction vessel obviates the need for mercury sensitisation. High deposition rates and material properties comparable to those or conventional plasma-enhanced CVD films have been achieved.

Keywords

DEPOSITION RATES
MATERIAL PROPERTIES
UV LAMP
H2 DISCHARGE LAMP
A-SI:H THIN FILM DEPOSITION
DIRECT PHOTOENHANCED DECOMPOSITION

This publication has 1 reference indexed in Scilit:

Principles of photoelectron spectroscopy
Published by Elsevier ,1984