Hydrogen Injection Into P-Type Silicon By Chemical Etching
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Hydrogen injection with B acceptor neutralization in p-type Si etched in HNOs and HF acid mixtures has been confirmed by isotopic [D] substitution and secondary ion mass spectrometry [SIMS] profiling. Quantitative measurements of the near-surface Injected hydrogen were made following field-aided, in-bulk transport [H+ drift] in reverse-bias annealed Schottky diodes from etched, B-doped Si. Chemical-etch injection is found to be self limiting with neutralization observed over a depth which is characteristic of the base material acceptor concentration and in the range 6–8 extrinsic Debye lengths, indicating that holes are essential in the injection mechanism. An effective diffusivity for hydrogen in etched p-Si of ∼ 2 × 10−9 cm2 s−1 was measured [300 K], considerably higher than previously reported.Keywords
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