Conduction-type conversion in Si-doped (311)A GaAs grown by molecular beam epitaxy
- 4 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (10) , 1444-1446
- https://doi.org/10.1063/1.114521
Abstract
We have systematically studied the dependence of the electrical properties of Si‐doped (311)A GaAs on the growth conditions in molecular beam epitaxy and have established a phase diagram for the conduction type as functions of the growth temperature and the V4/III flux ratio. A sharp boundary is observed for the transition between the p‐ and n‐type conduction, on both sides of which the activation efficiency of Si is close to unity. Furthermore, it is found that, in contrast to the case of the (111)A GaAs, the conduction‐type conversion in Si‐doped (311)A GaAs does not show a clear correlation with the macroscopic surface morphology, suggesting that the mechanism for the conduction‐type conversion in Si‐doped (311)A GaAs is different from that for the (111)A orientation.Keywords
This publication has 0 references indexed in Scilit: