Extrinsic photoconductivity in platinum-doped silicon

6 November 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (23) , 898-899
https://doi.org/10.1049/el:19800640

Abstract

Both n- and p-type silicon have been doped with platinum and characterised by measurement of carrier concentration profile, resistivity/temperature, Hall mobility and conductivity measurements. It is concluded that photoconductivity is limited by recombination at uncompensated platinum centres in heavily doped material, and at 100 K by trapping at shallow levels.

Keywords

TRAPPING AT SHALLOW LEVELS
SI:PT
CONDUCTIVITY
HALL MOBILITY
CARRIER CONCENTRATION PROFILE
RECOMBINATION
EXTRINSIC PHOTOCONDUCTIVITY
UNCOMPENSATED PT CENTRES
HEAVILY DOPED MATERIAL

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