High-gain lateral hot-electron device
- 2 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (14) , 1421-1423
- https://doi.org/10.1063/1.101613
Abstract
A lateral hot-electron device has been fabricated in a plane of a two-dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.Keywords
This publication has 5 references indexed in Scilit:
- Lateral tunneling, ballistic transport, and spectroscopy in a two-dimensional electron gasPhysical Review Letters, 1989
- Observation of single-optical-phonon emissionPhysical Review Letters, 1989
- High-gain pseudomorphic InGaAs base ballistic hot-electron deviceIEEE Electron Device Letters, 1989
- Structured base hot-electron transistorsSemiconductor Science and Technology, 1988
- Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infraredSolid-State Electronics, 1981