Carbon Doping in InGaAs grown by MBE
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Carbon incorporation in MOMBE-grown Ga0.47In0.53AsJournal of Crystal Growth, 1989
- Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filamentApplied Physics Letters, 1988
- The morphology and electrical properties of heteroepitaxial InAs prepared by MBEApplied Physics A, 1984
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977