The influence of contact materials on the conduction crystallization temperature and electrical properties of amorphous germanium, silicon and boron films
- 1 September 1970
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 6 (3) , 161-166
- https://doi.org/10.1016/0040-6090(70)90036-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Effect of Deposition Parameters on the Crystallinity of Evaporated Germanium FilmsJournal of Applied Physics, 1969
- Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium FilmJapanese Journal of Applied Physics, 1969
- Density of "Amorphous" GePhysical Review Letters, 1969
- An electron microscope study of the diffusion of metals in amorphous arsenic triselenide filmsThin Solid Films, 1969
- The structure of vapor-quenched Ag–Ge filmsJournal of Applied Crystallography, 1968
- Electrical conduction in amorphous silicon and germaniumThin Solid Films, 1968
- Preparation and Properties of Noncrystalline Silicon Carbide FilmsJournal of Applied Physics, 1968
- Electrical conduction in amorphous germaniumThin Solid Films, 1968
- Amorphous germanium and silicon: Structure and transport phenomenaMaterials Research Bulletin, 1968
- Electrical and Optical Properties of Amorphous GermaniumPhysical Review B, 1967