CdTe Epitaxial films and their properties
- 1 January 1977
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 12 (2) , 161-165
- https://doi.org/10.1051/rphysap:01977001202016100
Abstract
Undoped and doped CdTe films of p and n type conductivity with a given deviation of film composition from stoichiometry, were grown by a vapour epitaxial technique by heating the substrate with light. Measurement results of electrophysical properties and film homogenity versus thickness are given. P-N junctions were produced by epitaxy, their properties being investigated with scanning a electron microscopeKeywords
This publication has 1 reference indexed in Scilit:
- Scanning electron microscopyUspekhi Fizicheskih Nauk, 1969