HREELS investigation of the first stage of interaction of atomic hydrogen with GaAs(1 1 0) surfaces
- 1 April 1991
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 170 (1-4) , 487-491
- https://doi.org/10.1016/0921-4526(91)90163-9
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- High-resolution photoemission study of the interaction of hydrogen with GaAs(110) surfacesPhysical Review B, 1990
- Effects of atomic hydrogen on the surface properties of cleaved GaAs(110)Semiconductor Science and Technology, 1987
- Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP (111) and (1¯ 1¯ 1¯) surfacesPhysical Review B, 1987
- Surface studies of GaAs(111) and GaAs(1̄1̄1̄) using high-resolution electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and low-energy electron diffractionJournal of Vacuum Science & Technology B, 1985
- Oxygen and hydrogen adsorption on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Hydrogen chemisorption on the polar surfaces of GaAsJournal of Vacuum Science & Technology A, 1983
- Surface optical phonons and hydrogen chemisorption on polar and nonpolar faces of GaAs, InP, and GaPPhysical Review B, 1982
- Hydrogen Adsorption on GaAs(110) Studied by Electron-Energy-Loss SpectroscopyPhysical Review Letters, 1981
- Conduction-Band Surface Plasmons in the Electron-Energy-Loss Spectrum of GaAs(110)Physical Review Letters, 1981
- Photoemission study of the adsorption of O2, CO and H2 on GaAs(110)Surface Science, 1976