Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150 (1-4) , 383-387
- https://doi.org/10.1016/0022-0248(94)00725-x
Abstract
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