Detailed analysis of thin phosphorus-diffused layers in p-type silicon
- 31 March 1961
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 2 (2-3) , 123-132
- https://doi.org/10.1016/0038-1101(61)90029-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A new device using the tunneling process in narrow p-n junctionsSolid-State Electronics, 1960
- Gold in SiliconJournal of the Electrochemical Society, 1958