Use of precision density and lattice parameter measurements for study of point defects in single crystals of semiconductors
- 1 June 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 75 (3) , 491-496
- https://doi.org/10.1016/0022-0248(86)90094-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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