Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs
- 2 September 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (10) , 1408-1410
- https://doi.org/10.1063/1.117597
Abstract
Thin ZnSe films were grown by molecular beam epitaxy on Zn exposed (2×4) As-stabilized surfaces of GaAs epilayers under varied beam flux ratios. A very low density of faulted defects in the range of ∼ 104/cm2 was generated in samples grown under a condition with a mixture of both (2×1) and weak c(2×2) surface reconstructions at the initial stages of growth. However, an asymmetric distribution on the densities of extrinsic cation- and anion-terminated Shockley-type stacking faults were generated, respectively, in samples grown under Zn- and Se-rich surface stoichiometries.Keywords
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