The Preparation of Semi-Insulating Gallium Arsenide by Chromium Doping

• 1 January 1964
• journal article
• Published by The Electrochemical Society in Journal of the Electrochemical Society
• Vol. 111  (7) , 874-877
• https://doi.org/10.1149/1.2426273

Abstract

Keywords

• GALLIUM ARSENIDE
• CRYSTAL GROWTH FROM MELT
• DOPING
• SEGREGATION
• IMPURITY DISTRIBUTION
• ELECTRICAL CONDUCTIVITY
• HALL EFFECT