Direct adhesion of single-crystal GaAs wafers
- 31 March 1988
- journal article
- Published by Elsevier in Materials Letters
- Vol. 6 (5-6) , 167-169
- https://doi.org/10.1016/0167-577x(88)90093-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermal etching of GaAs by hydrogen under arsenic overpressureJournal of Applied Physics, 1986
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986
- Hardening of GaAs by solute-vacancy pairsJournal of Applied Physics, 1976
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Wetting of thin layers of SiO2 by waterApplied Physics Letters, 1974
- Bonding of Gallium Arsenide CrystalsJournal of the Electrochemical Society, 1973