In situ laser reflectometry applied to the growth of Al x G 1− x As Bragg reflectors by metalorganic chemical vapour deposition

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Abstract
Laser reflectometry has been applied as an in situ growth monitoring tool for the MOCVD growth of Bragg reflectors. Reproducible accuracy of 4 nm of the stop band centre was achieved for AlAs/GaAs mirrors. AlGaAs/AlAs mirrors requiring in situ composition calibration were also successfully grown.