Thermodynamic Calculation of Native Defect Concentrations in III‐V Alloy Semiconductors Grown by Halide Transport Vapor‐Phase Epitaxy

Publisher Website
Google Scholar
Abstract
The thermodynamic equilibrium concentrations of defects are calculated for III‐V alloy semiconductors grown by halide transport vapor‐phase epitaxy (VPE). The defect model of Van Vechten is used, and vacancies and antisites are considered to be the dominant defects. Defect concentrations in and are calculated as examples. Under a certain group V pressure, becomes more As‐rich as the Ga concentration increases, while becomes more Ga rich with increasing P concentration. The temperature dependence of defect concentrations is also calculated. It is predicted that the native defect concentrations in VPE materials can be much smaller than those in the crystals grown by liquid phase epitaxy.

This publication has 0 references indexed in Scilit: