Fourier photo-admittance spectroscopy
- 1 November 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11) , 7520-7525
- https://doi.org/10.1063/1.330161
Abstract
A new method of measurement is described in which Fourier technique is applied to diodes. It has the high signal-to-noise ratio and resolution of Fourier spectroscopy, as applied previously to photoconductors, as well as the thin-layer sensitivity of junction techniques. It extends the usefulness of junction techniques to spectral regions where, with a conventional monochromator, room-temperature radiation dominates over the incident monochromatic light. The method is exemplified by measurements on a level 0.3 eV below the conduction band in selenium-doped silicon.This publication has 9 references indexed in Scilit:
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