Infrared spectroscopy of semiconductor surfaces: H-terminated silicon surfaces
- 1 March 1993
- journal article
- Published by Elsevier in Journal of Molecular Structure
- Vol. 292, 65-80
- https://doi.org/10.1016/0022-2860(93)80090-i
Abstract
No abstract availableThis publication has 47 references indexed in Scilit:
- Vibrational energy transfer on hydrogen-terminated vicinal Si(111) surfaces: Interadsorbate energy flowThe Journal of Chemical Physics, 1992
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991
- Surface vibrational energy relaxation by sum frequency generation: Five-wave mixing and coherent transientsThe Journal of Chemical Physics, 1991
- Vibrational energy relaxation of a polyatomic adsorbate on a metal surface: Methyl thiolate (CH3S) on Ag(111)The Journal of Chemical Physics, 1991
- Lifetime of an adsorbate-substrate vibration: H on Si(111)Physical Review Letters, 1990
- A method for two-electron Gaussian integral and integral derivative evaluation using recurrence relationsThe Journal of Chemical Physics, 1988
- Surface phonon calculation for Si(111): H(1×1)Physica Scripta, 1988
- The structure of n-alkanes: High precision a b i n i t i o calculation and relation to vibrational spectraThe Journal of Chemical Physics, 1986
- Surface Studies by Spectral Analysis of Internally Reflected Infrared Radiation: Hydrogen on SiliconThe Journal of Chemical Physics, 1963
- Attenuated total reflectionSpectrochimica Acta, 1961