EBIC investigations of thick SOI layers
- 1 January 1988
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 23 (3) , 281-288
- https://doi.org/10.1051/rphysap:01988002303028100
Abstract
Thick SOI layers obtained by zone melting with and without seeds, respectively, have been investigated by EBIC with respect to their electrical properties (electrical homogeneity, electrically active defects, minority-carrier diffusion length). A variety of inhomogeneities being partly of complex origin has been observed. Their formation is affected by existence of seeds. Besides usual dark contrasts due to defects acting as recombination site there is evidence that some contrast phenomena are caused by dopant inhomogeneitiesKeywords
This publication has 8 references indexed in Scilit:
- Quantitative SEM/BIC studies of carrier recombination in silicon bicrystalsSemiconductor Science and Technology, 1987
- Classification of macroscopic defects contained in p-type EFG ribbon siliconSolid-State Electronics, 1986
- Silicon on insulators: Different approaches - A reviewJournal of Crystal Growth, 1984
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- Injection and doping dependence of SEM and scanning light spot diffusion length measurements in silicon power rectifiersSolid-State Electronics, 1982
- Electron-Beam-Induced Currents in SemiconductorsAnnual Review of Materials Science, 1981
- Advances in the electrical assessment of semiconductors using the scanning electron microscopeJournal of Microscopy, 1980
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978