Influence of indirect minima on electron concentration in GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As superlattices: A numerical study

This paper treats the influence of indirect minima on electron concentration in GaAs-${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As superlattices. It is shown that the population of the minizones arising from indirect minima significantly depends on superlattice parameters. For higher values of the mole fraction x and for thinner wells, the relative population of indirect-minima minizones is remarkable, and may even be equal to unity for x=1 and for very thin layers (∼3 nm). This effect is of importance in the determination of superlattice parameters.