High purity epitaxial InAs
- 31 January 1967
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 5 (1) , 5-6
- https://doi.org/10.1016/0038-1098(67)90035-x
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965