Highly selective KOH-based etchant for boron-doped silicon structures
- 31 May 1989
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 9 (1-4) , 167-170
- https://doi.org/10.1016/0167-9317(89)90039-7
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- (100) Silicon Etch‐Rate Dependence on Boron Concentration in Ethylenediamine‐Pyrocatechol‐Water SolutionsJournal of the Electrochemical Society, 1984