Comparison of GaAs MESFET noise figures

1 January 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (1) , 47-49
https://doi.org/10.1109/edl.1985.26037

Abstract

A method of comparing noise figures of GaAs MESFET's is presented. The noise measure M graphed against gate length for devices having the lowest value of M gives a figure of merit graph against which other devices may be compared. This is useful in determining the relative value of material and process, improvements for a given gate length.

Keywords

GALLIUM ARSENIDE
MESFETS
NOISE FIGURE
NOISE MEASUREMENT
LENGTH MEASUREMENT
FREQUENCY
PARASITIC CAPACITANCE
SEMICONDUCTOR DEVICE NOISE
FETS
LABORATORIES

This publication has 0 references indexed in Scilit: