Role of Capacitive Discharge Energy in the Switching of Semiconducting Glasses
- 1 November 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (18) , 1208-1210
- https://doi.org/10.1103/physrevlett.27.1208
Abstract
Incorporation of capacitive discharge energy in the heat equation yields results consistent with some aspects of the observed behavior of threshold switching devices not only for the case in which all points on the curve are accessible, but also for the case in which abrupt switching at constant current is observed. The type of switching displayed by a given device is material dependent. We present a relationship for the prediction of device behavior.
Keywords
This publication has 13 references indexed in Scilit:
- On the preswitching phenomena in semiconducting glassesSolid State Communications, 1971
- Investigation of the switching characteristics of the TeAsGeSi glass-filmsJournal of Non-Crystalline Solids, 1970
- Non-ohmic properties of some amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Conduction and switching phenomena in covalent alloy semiconductorsJournal of Non-Crystalline Solids, 1970
- Mechanism of threshold switching in semiconducting glassesJournal of Non-Crystalline Solids, 1970
- Thermal switching in semiconducting glassesJournal of Non-Crystalline Solids, 1970
- Ovonic threshold switching characteristicsJournal of Non-Crystalline Solids, 1970
- Switching by thermal avalanche in semiconducting glass filmsJournal of Non-Crystalline Solids, 1970
- Electronic conduction in amorphous semiconductors and the physics of the switching phenomenaJournal of Non-Crystalline Solids, 1970
- Energy-controlled switching process in the amorphous system TeAsGeSiJournal of Non-Crystalline Solids, 1970