Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa1−xAs (0≤x≤0.3)

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Abstract
Specific contact resistivity ρc of planar Ge/Pd ohmic contacts to n‐type AlxGa1−xAs is measured as a function of AlAs mole fraction x and anneal temperature Tann. The functional dependence of ρc on Tann is the same for all x, decreasing to a minimum at 275–325 °C. This indicates that the ohmic contact formation mechanism is independent of x(0≤x≤0.3) as verified by MeV Rutherford backscattering spectrometry and Read camera glancing angle x‐ray diffraction. Decomposition of an epitaxial Pd‐AlxGa1−xAs phase is correlated with the onset of ohmic behavior and may result in a thin solid phase regrown interfacial AlxGa1−xAs layer. An undoped 20 nm GaAs cap layer reduces ρc by about one order of magnitude. Ge/Pd contacts display greater dependence of ρc on x and much smoother surface morphology compared with those of standard Au‐Ge‐Ni contacts on AlxGa1−xAs (0≤x≤0.3).