Relations between transient charge transport and the glass-transition temperature in amorphous chalcogenides

Relations between transient charge transport and the glass-transition temperature, ${\mathit{T}}_{\mathit{g}}$, have been investigated in amorphous Se-based chalcogenides. The phenomenological relationship between the extrapolated zero-field drift-mobility activation energy, ${\mathit{E}}_0$, and the glass-transition temperature, ${\mathit{T}}_{\mathit{g}}$, is found to be ${\mathit{E}}_0$=1.2×${10}^{\mathrm{-}3}$ ${\mathit{T}}_{\mathit{g}}$ in these materials, where the units of ${\mathit{E}}_0$ and ${\mathit{T}}_{\mathit{g}}$ are eV and K, respectively. This relation can be understood by considering that the transient transport of photoinjected carriers is controlled by multiple trapping in an exponential-tail state, whose width is solely determined by ${\mathit{T}}_{\mathit{g}}$.