Two-dimensional effects in hot-electron modified MOSFET's
- 1 October 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (10) , 1416-1419
- https://doi.org/10.1109/T-ED.1983.21315
Abstract
This brief shows how the asymmetrical behavior of hot-electron modified MOSFET's with respect to swapping of source and drain is due to two-dimensional effects taking place within the transition region separating the device channel from the terminal junctions. In particular experimental data concerning enhanced threshold-voltage shift, asymmetrical transconductance, anomalous body effect, as well as short-channel-like behavior exhibited by the stressed transistors, are presented and discussed.Keywords
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