A parameter extraction technique for heterojunction bipolar transistors

Publisher Website

13 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1989.38867

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Equivalent Circuits For High Frequency Transistors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
GaAs MESFET modeling and nonlinear CAD
IEEE Transactions on Microwave Theory and Techniques, 1988
High-frequency characteristics of inverted-mode heterojunction bipolar transistors
IEEE Electron Device Letters, 1987
Determination of the Basic Device Parameters of a GaAs MESFET
Bell System Technical Journal, 1979