Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films
- 3 April 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (14) , 142508
- https://doi.org/10.1063/1.2193328
Abstract
We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.Keywords
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