Indium antimonide transistors
- 1 November 1961
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 3 (3-4) , 159-166
- https://doi.org/10.1016/0038-1101(61)90001-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Structure-Determined Gain-Band Product of Junction Triode TransistorsProceedings of the IRE, 1958
- High Electric Field Effects in-Indium AntimonidePhysical Review B, 1958
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953