Modification of the grain size of sputtered copper with additions of oxygen, krypton, silver, or yttrium

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Abstract
Several 800 to 1100 μm thick films of oxygen-free high-conductivity (OFHC) copper and copper with additions of oxygen, krypton, silver, or yttrium were deposited at rates of 0.5 to 1.2 μm/min using an enhanced thermionically supported-discharge (ETSD) sputtering apparatus. To obtain fine-grained materials, several deposition parameters, such as partial pressure of oxygen in the sputtering gas, bias, and substrate temperature, were varied. Oxygen and krypton were incorporated by trapping the sputtering gas; silver and yttrium were added by means of the target design. The structures and microstructures were examined with standard x-ray diffraction (XRD), transmission electron microscopy (TEM), and optical microscopy techniques. The grain sizes varied from 14 μm for the OFHC copper to 0.0073 μm for the Cu-4 at. % Y deposits. XRD data indicated an amorphous structure for the Cu-9 at. % Y deposits.

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