Doping of silicon by ion implantation
- 31 December 1965
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 38, 169-174
- https://doi.org/10.1016/0029-554x(65)90127-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Penetration of Heavy Ions of keV Energies into Monocrystalline TungstenPhysical Review B, 1964
- Junction Formation in Silicon by Positive Ion BombardmentIEEE Transactions on Nuclear Science, 1963
- Doping of Crystals by Ion Bombardment to Produce Solid State DetectorsReview of Scientific Instruments, 1962
- THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUMCanadian Journal of Chemistry, 1960